0.5 DUAL DIGIT NUMERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY High Performance GaP, GaAsP Dice 0.5 inch Character Height High Contrast Wide Viewing Angle Common Anode - MS251A, MG251A, MY251A, MO251A, Common Cathode - MS251C, MG251C, MY251C, MO251C

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MICRO-ELECTRONICS

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

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NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS

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TI

德州仪器