RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. Feature

文件：82.21 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. Feature

文件：55.01 Kbytes 页数：3 Pages

MICROSEMI

美高森美

16 AMP SCHOTTKY BARRIER RECTIFIER

16 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring reverse protection ● Low power loss, high efficiency ● VRRM 35 to 45 Volts ● Reverse engergy tested

文件：120.91 Kbytes 页数：2 Pages

MICROSEMI

美高森美

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MS1649 is Designed for UHF large signal, FM Land Mobile Applications. FEATURES: • Grounded Emitter • PG = 9.5 dB at 3.0 W/470 MHz • Omnigold™ Metalization System

文件：160.42 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS

DESCRIPTION: The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. Features • 470 MHz • POUT = 3W • GP = 9.5dB MINIMUM • COMMON EMITTE

文件：66 Kbytes 页数：3 Pages

ADPOW

16.0A SCHOTTKY BARRIER DIODE

文件：158.78 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

16.0A SCHOTTKY BARRIER DIODE

文件：158.78 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE

Microchip

微芯科技

DIODE SCHOTTKY 45V 16A TO220AC

Microchip

微芯科技

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技