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MRFX600GS数据手册恩XP中文资料规格书

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厂商型号

MRFX600GS

功能描述

Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

制造商

恩XP 恩XP

中文名称

N智浦

数据手册

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更新时间

2025-8-7 8:11:00

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MRFX600GS规格书详情

描述 Description

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.MRFX Series 65 V LDMOS Technology Read More

特性 Features

• Unmatched input and output allowing wide frequency range utilization
• Output impedance fits a 4:1 transformer
• Device can be used single-ended or in a push-pull configuration
• Qualified up to a maximum of 65 VDD operation
• Characterized from 30 to 65 V for extended power range
• High breakdown voltage for enhanced reliability
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in our product longevity program with assured supply for a minimum of 15 years after launch.
• RoHS compliant
Typical Applications
• Industrial, scientific, medical (ISM)
• Laser generation

• Plasma generation

• Particle accelerators

• MRI, RF ablation and skin treatment

• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
• HF communications

• Radar
• Mobile Radio
• HF and VHF communications

• PMR base stations

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