140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor

The MRFE8VP8600H and MRFE8VP8600HS high power transistors are designed for use in UHF TV broadcast applications. The devices have an integrated input matching network for better power distribution and are ideal for use in both analog and digital TV transmitters. • Excellent thermal characteristics\n• High gain for reduced PA size\n• High efficiency for Class AB and Doherty operations\n• Integrated input matching and unmatched output\n• Extended negative gate-gource voltage range of -6 Vdc to +10 Vdc\n• RoHS compliant;

恩XP

RF Power LDMOS Transistors

文件：335.78 Kbytes 页数：14 Pages

恩XP

AMPHENOL

安费诺

上传：深圳阅创想电子实业有限公司

SOT

NEC

瑞萨

上传：深圳市讯运电子有限公司

深圳迈睿

上传：深圳市金阳光电子技术有限公司