RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Device can be used Single--Ended or in a Push--Pull Configuration

• Qualified Up to a Maximum of 50 VDD Operation

• Characterized from 30 V to 50 V for Extended Power Range

• Suitable for Linear Application with Appropriate Biasing

• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

MRFE6VP61K25HR5属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的MRFE6VP61K25HR5晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。