MRFE6VP5150N

1.8-600 MHz，150 W连续波，50 V LDMOS宽带射频功率晶体管

These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency ran; • Wide Operating Frequency Range\n• Extreme Ruggedness\n• Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Integrated Stability Enhancements\n• Low Thermal Resistance\n• Integrated ESD Protection Circuitry\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tap;

恩XP

MRFE6VP5150N

RF Power LDMOS Transistors

恩XP

MRFE6VP5150NR1

RF Power LDMOS Transistors

恩XP

MRFE6VP5600H

Freescale/飞思卡尔
高频管

Freescale/飞思卡尔

MRFE6VP61K25H

Freescale
高频管