The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

文件：620.77 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

文件：295.86 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

文件：452.04 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体