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MRF8S19140HS中文资料Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V数据手册恩XP规格书

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厂商型号

MRF8S19140HS

功能描述

Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V

制造商

恩XP

中文名称

N智浦

数据手册

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更新时间

2025-12-13 14:54:00

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MRF8S19140HS规格书详情

描述 Description

The MRF8S19140HR3 and MRF8S19140HSR3 are designed for CDMA, W-CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

特性 Features

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)1930 MHz18.831.76.4–38.51960 MHz19.131.46.5–38.81990 MHz19.331.56.5–38.8

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