RF Power Field Effect Transistors

文件：756.68 Kbytes 页数：18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：756.68 Kbytes 页数：18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1805 MHz-1995 MHz，50 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET

The MRF8S18210WHSR3 and MRF8S18210WGHSR3 are designed for CDMA base station applications with frequencies from 1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Designed for Wide Instantaneous Bandwidth Applications.\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Internally Matched for Ease of Use\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Optimized for Doherty Applications\n• In Tape and Reel. R3 Suf;

恩XP

SMD

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市河锋鑫科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司