MRF8S18120HS

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V; • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Optimized for Doherty Applications\n• RoHS Compliant\n• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.\n;

The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

恩XP

MRF8S18120HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF8S18120HSR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF8S8260HSR3

FREESCALE
SMD

MRF9080LR5

FREESCALE
TO-272