RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：288.72 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：415.03 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V

The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Optimized for Doherty Applications\n• RoHS Compli;

恩XP

SMD

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市河锋鑫科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司