MRF7S21210HSR3中文资料飞思卡尔数据手册PDF规格书

2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.

Power Gain — 18.5 dB

Drain Efficiency — 29

Device Output Signal PAR — 5.9 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset — --33 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power

• Typical Pout @ 1 dB Compression Point ≃ 190 Watts CW

特性 Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.