RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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freescaleFreescale Semiconductor, Inc

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N-Channel Enhancement-Mode Lateral MOSFET

文件：1.3259 Mbytes 页数：13 Pages

恩XP

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20.3 dBDrain Efficiency: 65.5%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power\n• Typical Broadband P;

恩XP

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

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