RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

文件：781.69 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

文件：781.69 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

470-860 MHz, 45 W Avg., 32 V Lateral N-Channel RF Power MOSFET

Overview The MRF377HR3 is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipme \n•Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM\nOutput Power: 45 Watts Avg.\n\tPower Gain ≥ 16.7 dB\n\tEfficiency ≥ 21%\n\tACPR ≤ –58 dBc\n\n•Typical Broadband ATSC 8VSB Performance @ 470–860 MHz,32 Volts, \nIDQ = 2000 mA\nOutput Power: 80 Watt;

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