RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

These high ruggedness devices, MRF300AN and MRF300BN, are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows • Unmatched input and output allowing wide frequency range utilization\n• Two opposite pin-connection versions (A and B) to be used in a push-pull, two-up configuration for wideband performance\n• Characterized from 30 to 50 V\n• Suitable for linear application\n• Integrated ESD protection with grea;

恩XP

RF Power LDMOS Transistors

文件：685.37 Kbytes 页数：17 Pages

恩XP

Silicon Complementary Transistors Audio Power Amplifier

Silicon Complementary Transistors Audio Power Amplifier

文件：19.44 Kbytes 页数：2 Pages

NTE

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current 300A •VCEX Collector-emitter voltage 600V •hFE DC current gain 750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

文件：71.54 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE •IC Collector current 300A •VCEX Collector-emitter voltage 600V •hFE DC current gain 750 •Insulated Type •UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor

文件：71.54 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机