RF Power GaN Transistors

文件：265.25 Kbytes 页数：14 Pages

恩XP

RF Power GaN Transistors

文件：265.25 Kbytes 页数：14 Pages

恩XP

RF Power GaN Transistors

文件：265.25 Kbytes 页数：14 Pages

恩XP

RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V

PREPRODUCTION \n• Advanced GaN on SiC, for optimal thermal performance\n• Characterized for CW, long pulse (up to several seconds) and short pulse operations\n• Device can be used in a single-ended or push-pull configuration\n• Input matched for simplified input circuitry\n• Qualified up to 55 V\n• Suitable for l;

恩XP

RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V

PREPRODUCTION \n• Advanced GaN on SiC, for optimal thermal performance\n• Characterized for CW, long pulse (up to several seconds) and short pulse operations\n• Device can be used in a single-ended or push-pull configuration\n• Input matched for simplified input circuitry\n• Qualified up to 55 V\n• Suitable for l;

恩XP