The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

• Typical W–CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power: 11.5 Watts Efficiency: 16 Gain: 12.2 dB ACPR: –45 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Ease of Design for Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters