MRF21085LSR3中文资料下载供应商报价-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF21085LSR3	文件：387.73 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat 文件：387.73 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3	文件：562.19 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi 文件：562.19 Kbytes 页数：12 Pages	Motorola 摩托罗拉	Motorola
MRF21085LSR3	文件：197.85 Kbytes Page：11 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：197.85 Kbytes 页数：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3_08	文件：197.85 Kbytes Page：11 Pages	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：197.85 Kbytes 页数：11 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

更多MRF21085LS供应商更新时间2025-12-18 13:53:00