1.8-500 MHz，1500 W连续波，50 V LDMOS宽带射频功率晶体管

These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range us • High drain-source avalanche energy absorption capability\n• Unmatched input and output allowing wide frequency range utilization\n• Device can be used single-ended or in a push-pull configuration\n• Characterized from 30 to 50 V for ease of use\n• Suitable for linear application\n• Integrated ESD ;

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：827.29 Kbytes 页数：21 Pages

恩XP

Surge Capable Thick Film Non Inductive

文件：106.02 Kbytes 页数：1 Pages

OHMITE

Ideal to replace standard carbon com-position resistors

文件：357.25 Kbytes 页数：2 Pages

OHMITE

Surge Capable Thick Film Non Inductive

文件：106.02 Kbytes 页数：1 Pages

OHMITE