MRF1508中文资料8 W, 520 MHz, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET数据手册恩XP规格书

描述 Description

The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETsThe MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts
  Output Power — 8 Watts
  Power Gain — 14 dB
  Efficiency — 60%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive
• RF Power Plastic Surface Mount Package
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.