MPV1965

MONOLITHIC MICROWAVE SURFACE MOUNT VARACTOR DIODES

DESCRIPTION TheMPVseriesofsurfacemountVaractordiodesutilizesauniquenewmonolithicfabricationtechnology.Thistechnologyemployspackage/deviceintegrationaccomplishedatthewaferfabricationlevel.Sincethecathodeandanodeinterconnectionsutilizeprecisionphotolithographic

MPV1965

VARACTOR DIODES Surface Mount MMSM Varactors

MPV1965_09

VARACTOR DIODES Surface Mount MMSM Varactors

MPV1965-206

Package：0402（1005 公制）；包装：托盘 类别：分立半导体产品 二极管 - 可变电容（变容器，可变电抗器） 描述：SI TVAR NON HERMETIC MMSM

MPV1965-206/TR

Package：0402（1005 公制）；包装：托盘 类别：分立半导体产品 二极管 - 可变电容（变容器，可变电抗器） 描述：SI TVAR NON HERMETIC MMSM

NTE1965

IntegratedCircuitNegative,3-TerminalVoltageRegulator

Description: TheNTE1961throughNTE1977seriesofmonolithic3–terminalnegativevoltageregulatorsemployinternalcurrentlimiting,thermalshut–down,andsafe–areacompensationinanisolatedTO220typepackagemakingthemessentiallyindestrucible.Ifadequateheatsinkingisprovided,the

RL-1965

NATIONALSEMICONDUCTORSIMPLESWITCHERAPPLICATIONS

RMPA1965

US-PCSCDMA,CDMA2000-1XandWCDMAPowerEdgeTMPowerAmplifierModule

RMPA1965

US-PCSCDMA,CDMA2000-1XandWCDMAPowerEdgePowerAmplifierModule

GeneralDescription TheRMPA1965poweramplifiermodule(PAM)isdesignedforCDMA,CDMA2000-1X,WCDMAandHSDPApersonalcommunicationssystem(PCS)applications.The2stagePAMisinternallymatchedto50Ωtominimizetheuseofexternalcomponentsandfeaturesalow-powermodetoreducestand

RN1965

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ●IncludingtwodevicesinUS6(ultrasuperminitype6leads) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN2961~RN2966