TMOS ICePAK Power Module

TMOS ICePAK Power Module P-Channel Power MOSFET and N-Channel SENSEFET™ Product in a Full H-Bridge Configuration

文件：348.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

H-BRIDGE MOSFET POWER MODULE

DESCRIPTION:\n     The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors.  The N Channel MOSFETS are current sensing to allow

M.S. Kennedy

FUENTE 1 SALIDA VARIABLE 0-30V/5A

Descripción Fuente de Alimentación Principal: 220V ±10%, 50/60Hz ±2Hz; 110/220V ±10% seleccionable, 50/60Hz ±2Hz (cliente opcional).

文件：342.04 Kbytes 页数：2 Pages

AGELECTRONICA

FUENTE 1 SALIDA VARIABLE 0-30V/5A

Descripción Fuente de Alimentación Principal: 220V ±10%, 50/60Hz ±2Hz; 110/220V ±10% seleccionable, 50/60Hz ±2Hz (cliente opcional).

文件：342.04 Kbytes 页数：2 Pages

AGELECTRONICA

H-BRIDGE MOSFET POWER MODULE

DESCRIPTION: The MSK 3002 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3002 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The N Channel MOSFETS are current sensing to allow for

文件：356.92 Kbytes 页数：6 Pages

MSK