ASRD820T

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASRD820-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASRD820T-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ATF820

FASTSWITCHINGTHYRISTOR

AZ820

SUBMINIATUREDIPRELAY

FEATURES •Lowprofileforcompactboardspacing •DCcoilsto48VDC •Lifeexpectancyto10millionoperations •StandardPC0.1gridterminalspacing •Fitsstandard16pinICsocket •Epoxysealedforautomaticwavesolderingandcleaning •MeetsFCCPart68.3021500Vlig

B820

SurfaceMountSchottkyBarrierRectifiers

REVERSEVOLTAGE20TO60VOLTSFORWARDCURRENT8.0AMPERE Features: *ForSurfaceMountApplication *Metal-SemiconductorJunctionWithGuardring *EpitaxialConstruction *VeryLowForwardVoltageDrop *HighCurrentCapability *PlasticMeterialHasULFlammabilityClassificatio

B820

ADSLLINETRANSFORMER

BF820

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,highvoltage. Applications Telephonyandprofessionalcommunicationequipment

BF820

NPNhighvoltagetransistor

1.Generaldescription NPNhigh-voltagetransistorinasmallSOT23Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:BF821 2.Featuresandbenefits •Lowcurrent(max.50mA) •Highvoltage(max.300V) 3.Applications •Telephonyandprofessionalcommunicationequipment

BF820

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BF820

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation–1.5W •PlasticcaseSOT-223 •Weightapprox.–0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BF820

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistors especiallysuitedforapplicationinclass-B videooutputstagesofTVreceiversand monitors. ◆Ascomplementarytypes,thePNPtransistors BF821andBF823arerecommended.

BF820

SOT-23-PowerTransistorandDarlingtons

BF820

NPNHigh-VoltageTransistors

Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V).

BF820

SILICONEPITAXIALTRANSISTORS

SILICONEPITAXIALTRANSISTORS N–P–Ntransistors SOT-23FormedSMDPackage

BF820

SOT-23Plastic-EncapsulateTransistors

FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V) Telephonyandprofessionalcommunicationequipment.

BF820

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment.

BF820

SILICONEPITAXIALTRANSISTORS

SILICONEPITAXIALTRANSISTORS N–P–Ntransistors SOT-23FormedSMDPackage

BF820

TRANSISTOR(NPN)

FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V) ●Telephonyandprofessionalcommunicationequipment.

BF820

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaSOT23plasticpackage. PNPcomplements:BF821;BF823. FEATURES •Lowcurrent(max.50mA) •Highvoltage(max.300V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.