Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pins) • Built-in resistance (RB). • Surge voltage is clamped by zener diode (C-B). • Low VCE (sat): VCE (sat)= 1.2 V (max) (IC= 0.5 A, VBH= 4.2 V) • Hi

文件：60.69 Kbytes 页数：2 Pages

TOSHIBA

东芝

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：139.26 Kbytes 页数：3 Pages

TOSHIBA

东芝

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：139.26 Kbytes 页数：3 Pages

TOSHIBA

东芝

Rectifier diodes schottky barrier

文件：43.53 Kbytes 页数：5 Pages

PHI

PHI

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：222.45 Kbytes 页数：12 Pages

TECCOR