PCMF2DFN1

Marking：MP1；Package：DFN2520-9；Common-mode EMI filter for differential channels with integrated ESD protection

MP10N50EI-F1-BR

Marking：MP10N50EI；Package：TO-220MF-K1；N- CHANNEL MOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical16.6pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

MP156GS

Marking：MP156；Package：SOIC8；Small, Energy-Efficient, Off-line Regulator 30mW No-Load Power Consumption

DESCRIPTION MP156isaprimary-sideregulatorthatprovidesaccurateconstantvoltage(CV)regulationwithoutopto-coupler,supportBuck,Buck-Boost,BoostandFlybacktopologies.Ithasanintegrated500VMOSFETtosimplifythestructureandreducecosts.Thesefeaturesmakeitacompetitivecan

MP174AGS

Marking：MP174A；Package：SOIC-8；700V Non-Isolated Off-Line Regulator,Up to 400mA Output Current with Improved EMI Performance

DESCRIPTION TheMP174Aisaprimary-sideregulatorthat providesaccurateconstantvoltage(CV) regulationwithoutanopto-coupler.Itsupports buck,buck-boost,boost,andflybacktopologies. Ithasanintegrated700VMOSFETtosimplify thestructureandreducecosts.Thesefeatures makei

MP1922GV

Marking：MP1922；Package：QFN-22；100V, 3A, Single-Channel,Half-Bridge Pre-Driver IC

FEATURES •Supports100VSupplyOperation •3ASource,4ASinkGateDriveCurrent •InternalChargePumpandAuto-Refreshfor High-Side(HS)GateDrive •IntegratedCurrent-SenseAmplifier •Low-PowerSleepMode •ProgrammableControlledSlewRate •DesaturationProtectionofExternal MOS

MPQ1923GR-AEC1

Marking：MP1923；Package：QFN-8；100V, 8A, High-Frequency,Half-Bridge Gate Driver,AEC-Q100 Qualified

DESCRIPTION TheMPQ1923-AEC1isahigh-frequency,Nchannel MOSFET,half-bridgegatedriver.The device’slow-sideMOSFET(LS-FET)andhighside MOSFET(HS-FET)driverchannelsare controlledindependently,andarematchedwith

MPQ1923GRE-AEC1

Marking：MP1923；Package：QFN-10；100V, 8A, High-Frequency,Half-Bridge Gate Driver,AEC-Q100 Qualified

DESCRIPTION TheMPQ1923-AEC1isahigh-frequency,Nchannel MOSFET,half-bridgegatedriver.The device’slow-sideMOSFET(LS-FET)andhighside MOSFET(HS-FET)driverchannelsare controlledindependently,andarematchedwith

MP100GN

Marking：MP100；Package：SOIC8E；Offline Inductor-less Regulator For Low Power Applications

MP100LGN

Marking：MP100L；Package：SOIC-8EP；Offline Inductor-Less Regulator For Low Power Application

MP103GN

Marking：MP103；Package：SOIC8E；Higher Power Offline Inductor-Less Regulator For Low Power Applications