Industrial Femtosecond Laser

FEATURES APPLICATIONS • 150 μJ/pulse for processing of high ablation threshold materials • 150 W average power for high throughput •

文件：883.98 Kbytes 页数：5 Pages

COHERENT

高意

SCHOTTKY BARRIER RECTIFIER

文件：260.69 Kbytes 页数：2 Pages

CHENMKO

力勤

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

文件：100.91 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

文件：101.57 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉