MOCD213R2M中文资料安森美半导体数据手册PDF规格书

These devices consist of two gallium arsenide infrared emitting

diodes optically coupled to two monolithic silicon phototransistor

detectors, in a surface mountable, small outline, plastic package. They

are ideally suited for high−density applications, and eliminate the need

for through−the−board mounting.

特性 Features

• Closely Matched Current Transfer Ratios

• Minimum BVCEO of 70 V Guaranteed

– MOCD207M, MOCD208M, MOCD213M

• Minimum BVCEO of 30 V Guaranteed

– MOCD211M, MOCD217M

• Low LED Input Current Required for Easier Logic Interfacing

– MOCD217M

• Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050″ Lead Spacing

• Safety and Regulatory Approvals:

– UL1577, 2,500 VACRMS for 1 Minute

– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

• These are Pb−Free Devices

Applications

• Feedback Control Circuits

• Interfacing and Coupling Systems of Different Potentials and

Impedances

• General Purpose Switching Circuits

• Monitor and Detection Circuits