6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS

Description The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M) ■ UL recognized (File #

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FAIRCHILD

仙童半导体

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can c

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NEC

瑞萨

SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

文件：79.01 Kbytes 页数：7 Pages

NEC

瑞萨

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

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NEC

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