Silicon NIP Diode

文件：524 Kbytes 页数：2 Pages

MA-COM

Process Geometry

Features • Low Input Capacitance: 2.3pF Typical • Low Gate Leakage: 1.5pA Typical • High Breakdown Voltage: -30V Typical • High Input Impedance • Die Size: 482um X 482um X 203um • Bond Pads: 90um Diameter • Substrate Connected to Gate • Au Back Side Finish • Flip Chip Bumped Package Optio

文件：404.66 Kbytes 页数：5 Pages

InterFET

NPAK Valve Block (for #6 and #8)

文件：206.5 Kbytes 页数：1 Pages

RALSTON

10/100 BASE PULSE TRANSFORMER FOR PCMCIA

Half port and single port designs for maximum layout flexibility Low profile packages from 0.09 Inch(2.39MM) TO 0.078 Inch (1.98) FOR PCCARD AND CARDBUS applications Compatible WITH INTEL,TDK,QDI,AND ICS Transceivers Storage temperature range: -40℃to +125℃.

文件：334.15 Kbytes 页数：3 Pages

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