RF Power Field Effect Transistors

文件：818.84 Kbytes 页数：15 Pages

恩XP

RF Power Field Effect Transistors

文件：818.84 Kbytes 页数：15 Pages

恩XP

RF Power Field Effect Transistors

文件：818.84 Kbytes 页数：15 Pages

恩XP

1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

RF Power transistors, MMRF1005HR5 and MMRF1005HSR5, are designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse applications, such as DME/IFF systems. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 20 V to 50 V for Extended Power Range\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for I;

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恩智浦

Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V

RF Power transistors, MMRF1005HR5 and MMRF1005HSR5, are designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse applications, such as DME/IFF systems. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 20 V to 50 V for Extended Power Range\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for I;

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恩智浦