RF Power Field Effect Transistors

文件：965.3 Kbytes 页数：27 Pages

恩XP

RF Power Field Effect Transistors

文件：965.3 Kbytes 页数：27 Pages

恩XP

1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, 2xW-CDMA RF Power LDMOS Transistors

The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. • Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEPPower Gain: 15.5 dBDrain Efficiency: 36%IMD: –34 dBc\n• Typical 2-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., Full Frequency Band (2130-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR ;

恩XP

10A BRIDGE RECTIFIER

Features ● Diffused Junction ● High Current Capability ● High Case Dielectric Strength ● High Surge Current Capability ● Ideal for Printed Circuit Board Application ● Plastic Material has UL Flammability 94V-0 ● Recognized File # E157705

文件：35.21 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

Silicon Bridge Rectifiers

Reverse Voltage: 50 - 1000 Volts Forward Current: 10 Amp Features - Diffused Junction - High Current Capability - High Case Dielectric Strength - High Surge Current Capability - Ideal for Printed Circuit Board Application - Plastic Material has Underwriters Laborato

文件：35.75 Kbytes 页数：2 Pages

COMCHIP

典琦

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 10 Amperes FEATURES * Surge overload rating: 200 Amperes peak * Low forward voltage drop * Small size: simple installation

文件：285.17 Kbytes 页数：2 Pages

DCCOM

道全