MMP7010数据手册MACOM中文资料规格书

描述 Description

The MPN-7000 Series and MMP-7000 Series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a grown junction P++ layer, MMP-7000 Series PIN diodes yield a very abrupt structured “I” region with minimum outdoping and low voltage punch-through characteristics. Our high temperature passivation and state-of-the-art metallization produce diodes that are designed to cover a wide range of applications that fall into the general categories of switching, phase switching, attenuating and limiting. These devices are rugged and able to meet all visual criteria in space and military applications.

特性 Features

·igh Temperature Passivation for Reliability
·Full Area Gold Contact for the Lowest Capacitance and Largest Bonding Pad Available
·Grown Junction for sharp “I” Region Interface

应用 Application

·ISM