MML09212H中文资料400-1400 MHz，37.5 dB，22.8 dBm，0.52 dB NF E-pHEMT LNA数据手册恩XP规格书

描述 Description

The MML09212HT1 is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W-CDMA and LTE.

特性 Features

• Low noise figure: 0.52 dB @ 900 MHz
• Frequency: 400-1400 MHz
• Unconditionally stable over temperature
• High reverse isolation: –58 dB @ 900 MHz
• P1dB: 22.8 dBm @ 900 MHz
• Small-signal gain: 37.5 dB @ 900 MHz
• Third order output intercept point: 37.5 dBm @ 900 MHz
• Active bias control (on-chip)
• Single 5 V supply
• Supply current: 150 mA
• 50 Ohm operation (some external matching required)
• Cost-effective 12-pin, 3 mm QFN surface mount plastic package
• RoHS compliant