首页 >MMIS60R750PTHMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELMOSFETinaTO-220FLPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
600V0.75(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V0.75(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.75(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V0.75(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.75(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
