Heterostructure Field Effect Transistor

250-4000 MHz, 12 dB 22.5 dBm GaAs HFET The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 t

文件：302.88 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterostructure Field Effect Transistor (GaAs HFET)

250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from

文件：468.79 Kbytes 页数：15 Pages

恩XP

Heterostructure Field Effect Transistor (GaAs HFET)

文件：302.54 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

250-4000 MHz，12 dB，22.5 dBm GaAs HFET GPA

MMH3111NT1是一款通用放大器，经过内部输入和输出预匹配。它适用于广泛的A类、小信号、高线性度、通用应用。它适用于频率范围在250至4000 MHz之间的应用，例如：移动通信，PCS，WLL，PHS，CATV，VHF，UHF，UMTS和通用小信号射频。 频率：250至4000 MHz\n P1dB：22.5 dBm @ 900 MHz\n 小信号增益：12 dB @ 900 MHz\n 输出三阶交调点：44 dBm @ 900 MHz\n 5 V单电源\n 内部预匹配至50 Ohms\n 内部偏置\n 高性价比SOT-89表面贴装塑料封装\n 符合RoHS规范\n 采用盘卷包装。T1后缀 = 1000个，12 mm卷带宽度，7英寸卷盘。;

恩XP

Heterostructure Field Effect Transistor (GaAs HFET)

文件：302.54 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体