650V 0.195(ohm) N-channel MOSFET

文件：1.28169 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 195mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：323.42 Kbytes 页数：2 Pages

ISC

无锡固电

650V 0.195(ohm) N-channel MOSFET

文件：1.28169 Mbytes 页数：10 Pages

MGCHIP

650V N-Ch MOSFET

MagnaChip

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