isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.35 Kbytes 页数：2 Pages

ISC

无锡固电

700V 0.9(ohm) N-channel MOSFET

文件：1.09912 Mbytes 页数：10 Pages

MGCHIP

700V N-Ch MOSFET

MagnaChip

美格纳

700V 0.9Ω N-channel MOSFET

 Description MMF70R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.27119 Mbytes 页数：10 Pages

MGCHIP

700V 0.9Ω N-channel MOSFET

 Description MMF70R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.27119 Mbytes 页数：10 Pages

MGCHIP

700V 0.9(ohm) N-channel MOSFET

文件：1.37172 Mbytes 页数：10 Pages

MGCHIP