MMF65R190PTH说明书PDF资料贸易商无锡固电-114ic电子网

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MMF65R190PTH	文件：322.89 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MMF65R190PTH	文件：1.2094 Mbytes Page：10 Pages	650V 0.19(ohm) N-channel MOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP
65R190	文件：450.41 Kbytes Page：6 Pages	20A竊?50VN-CHANNELMOSFET	KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司	KIA
IIPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW65R190CFD	文件：335.92 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R190CFD	文件：261.04 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFD	文件：189.53 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：331.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	MMF65R190PTH	MAGNACHIP	2016+	TO-220F	3900	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市达恩科技有限公司	MMF65R190PTH	MagnaChip	18+	NA	3427	进口原装正品优势供应QQ3171516190	询价
深圳市瑞新盛科技有限公司	MMF65R190PTH	Magnachip		TO-220F	30000	原装正品价格优势现货库存	询价
深圳市宏捷佳电子科技有限公司	MMF65R190PTH	MAGNACHIP	23+	TO-TO-220F	12300	全新原装真实库存含13点增值税票!	询价
深圳市科思奇电子科技有限公司	MMF65R190PTH	MAGNACHIP/美格纳	22+	TO-220F	360000	进口原装房间现货实库实数	询价
深圳市宇创芯科技有限公司	MMF65R190PTH	MAGNACHIP/美格纳	22+	TO-220F	9600	原装现货,优势供应,支持实单!	询价
深圳市国宇半导体科技有限公司	MMF65R190PTH	MAGNACHIP/美格纳	23+	TO-220F	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	MMF65R190PTH	MGCHIP	23+	TO-220F	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	MMF65R190PTH	MAGNACHIP/美格纳	2022+	TO-220F	50000	原厂代理终端免费提供样品	询价
深圳市科恒伟业电子有限公司	MMF65R190PTH	TH/韩国太虹	2048+	TO-220F	9851	只做原装正品现货!或订货假一赔十!	询价

更多MMF65R190PTH供应商更新时间2024-4-30 8:30:00

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