MMDB35-0402数据手册分立半导体产品的二极管-射频规格书PDF

描述 Description

The Silicon Mesa Beam Lead Step Recovery diodes provide low capacitance, very fast transition times, and low inductance along with low parasitic capacitance compared to packaged or chip devices. The fast transition times make these devices useful for fast sampling gate drivers, frequency multipliers and comb generators to 40 GHz and beyond.

特性 Features

·Low Inductance
·Transition times down to 30 picoseconds in 50 system
·Rugged Beam Lead construction
·Oxide and polymide passivation

应用 Application

·ISM