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MMDT3904

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMDT3904

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •ULTRA-SmallSurfaceMountPackage

TRSYS

Transys Electronics

MMDT3904

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

DIODESDiodes Incorporated

美台半导体

MMDT3904

DUALSURFACEMOUNTNPNTRANSISTORS

Thisdevicecontainstwoelectrically-isolated2N3904NPNtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES •ElectricallyIsola

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMDT3904

DualNPNSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMDT3904

Multi-ChipTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMDT3904

200mWPlastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Collector-Current:IC=0.2A •Epitaxialplanardieconstruction •Idealforlowpoweramplificationandswitching •Marking:K6N •EpoxymeetsUL94V-0flammabilityrating •Moisur

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMDT3904

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMDT3904

DualNPNSiliconEpitaxialPlanarTransistor

Features Epitaxialplanardieconstruction ComplimentarytoTPMMDT3906C6 Ultra-smallsurfacemountpackage

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

MMDT3904

DualNPNSmallSignalSurfaceMountTransistor

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

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