MMBZ33V中文资料33 V Dual Common Anode Zener Diode Protection数据手册ONSEMI规格书

描述 Description

These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

特性 Features

• SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range - 3 V to 26 V
• Standard Zener Breakdown Voltage Range - 5.6 V to 33 V
• Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional)
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage
• Flammability Rating UL 94V-O Mechanical Characteristics:
• CASE: Void-free, transfer-molded, thermosetting plastic case
• FINISH: Corrosion resistant finish, easily solderable
• MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 degrees C for 10 Seconds
• Package designed for optimal automated board assembly
• Small package size for high density applications
• Available in 8 mm Tape and Reel
• Pb-Free Packages are Available
• AEC-Q101 Qualified and PPAP Capable
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

简介

MMBZ33V属于电路保护的TVS-二极管。由制造生产的MMBZ33VTVS - 二极管TVS 二极管是一种半导体器件，可用于限制或阻止特定电压电平的浪涌。该系列产品使用二极管（只能单向导电的元器件）进行设计。TVS 是 Transient Voltage Suppression/Suppressor（瞬态电压抑制/抑制器）的首字母缩写。类型包括转向（轨至轨）或齐纳，具有单向通道、双向通道、电压 – 反关态、电压 – 击穿、电压 – 箝位、电流 – 峰值脉冲、功率 – 峰值脉冲和电源线路保护等特征。