MMBT3904LP

40VMatchedPairNPNSmallSignalTransistors

MMBT3904LP

50VNPNGeneralPurposeTransistor|

Features «Highvoltageandhighcurrent :Vceo=50V,Ic=100mA(max) «Excellenthglinearity:hrg(Ic=0.1mA)/hgeg(Ic=2mA)=0.95(typ.) *Highhrg-hp=120to400

MMBT3904LRFG

300mW,NPNSmallSignalTransistor

MMBT3904M

TRANSISTOR

DESCRIPTION NPNEpitaxialSiliconTransistor FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMBT3906M) Ultra-SmallSurfaceMountPackage AlsoAvailableinLeadFreeVersion APPLICATION GeneralPurposeAmplifier,switching Forportableequipm

MMBT3904M

0.2A,60VNPNPlasticEncapsulatedTransistor

FEATURES ●Smallpackage

MMBT3904M

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:1N •SingleGeneral-PurposeSwitching

MMBT3904M

SOT-723Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●ComplementarytoMMBT3906M ●SmallPackage

MMBT3904M

TRAN(NPN)SISTOR(NPN)

MMBT3904M-C

NPNPlasticEncapsulatedTransistor

FEATURES ●SmallPackage

MMBT3904-Q

40V,200mANPNswitchingtransistor

1.Generaldescription NPNswitchingtransistorinasmallSOT23(SC-70)Surface-MountedDevice(SMD)plastic package. PNPcomplement:MMBT3906 2.Featuresandbenefits •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V •QualifiedaccordingtoAEC-Q101and