首页 >MMBT2222(M1B)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISMMBT2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINAND | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SmallSignalTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. •ThistransistorisalsoavailableintheTO-92casewiththetypedesignationMPS2222A. | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Features •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation,IC=600mA •OperatingJunctionTemperature:-55°Cto+150°C •StorageTemperature:-55°Cto+150°C •CaseMaterial:MoldedPlastic.ULFlammabilityClassificatioRating94-0andMSLRating1 •Marking:1P | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SmallSignalTransistor(NPN) Features NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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