OPD1616N

SiliconPINPhotoDiode

HighSpeedSensitivity Structure 1.1ChipSize:1.60mmX1.60mm 1.2ChipThickness:400±20um 1.3Metallization:Top-Al,Bottom-Au 1.4Passivation:SiliconNitride 1.5BondingPadSize -Cathode(Top):300umX300um -Anode(Bottom) 1.6ActiveArea:1.40mmX1.40mm

PCT-1616

MODEMTRANSFORMER

[Micro-Electronics] MODEMTRANSFORMER Suitableformodemspeedupto:56Kbps

PE1616

10MHzto6GHzNBiasTeeRatedTo2500mAAnd100VoltsDC

PTT-1616

MODEMTRANSFORMER

RC1616

0.5AAdjustable/FixedLowDropoutLinearRegulator

Description TheRC1616andRC1616-2.5,-3.3and-5arelowdropoutthree-terminalregulatorswith0.5Aoutputcurrentcapability.Thesedeviceshavebeenoptimizedforlowvoltagewheretransientresponseandminimuminputvoltagearecritical. The5VversionisdesignedalsotobeusedinUSBH

RCR1616

POWERINDUCTORS>Type>

◆ProductDescription ◾13.0mmMax.φ,15.0mmMax.Height. ◾InductanceRange:10μH～33μH ◾RatedCurrentRange:2.3～4.5A(RP135),2.8～6.2A(RP135B) ◾Inadditiontothestandardversionsofinductorsshownhere,custominductorsareavailabletomeetyourexactrequirements ◆Feature ◾Ma

RCR1616

POWERINDUCTORSPinType:RCR>Series>

RMLV1616A

16MbAdvancedLPSRAM(1Mword횞16bit/2Mwordx8bit)

RMLV1616A-U

16MbitLPSRAM(1Mword×16bit/2Mwordx8bit)

Description TheRMLV1616A-USeriesisafamilyof16-MbitasynchronousSRAMsorganized1,048,576-word×16-bit. TheRMLV1616A-USerieshasrealizedhighersofterrorimmunitycomparedtotypicalSRAMswithon-chipECC, archivedbyRenesas’suniqueAdvancedLPSRAMtechnologies.Therefore,itis

RVC1616S

HIGHRELIABILITYVCO|SPACESOLUTIONS

Features TIDlimitof100kRadandlatch‐upfreetill62MeV Thickfilmtechnology Excellentphasenoisewithbroadbandtuningrange Hermeticallysealedpackage HighreliabilityandqualifiedasperISRO‐PAS‐206 CanbeManufacturedinaccordancewith:MIL‐PRF‐55310Class2,Level