MMBFJ309L中文资料N 沟道 JFET 晶体管数据手册ONSEMI规格书

描述 Description

This N-Channel JFET device is designed for high frequency amplifiers and oscillators.

特性 Features

• SOT-23 Surface Mount Package Saves Board Space
• Drain and Source are interchangable
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

简介

MMBFJ309L属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的MMBFJ309L晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。