TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * Low forward voltage drop * High Reliability

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DCCOM

道全

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * Low forward voltage drop * High Reliability

文件：263.96 Kbytes 页数：2 Pages

DCCOM

道全

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

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MOTOROLA

摩托罗拉

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

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NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

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POINN