Heterojunction Bipolar Transistor Technology

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or re

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freescaleFreescale Semiconductor, Inc

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：901.87 Kbytes 页数：18 Pages

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Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：901.87 Kbytes 页数：18 Pages

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1800-2200 MHz，27.2 dB，30.5 dBm InGaP HBT线性放大器

The MMA20312BVT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz suc • Frequency: 1800-2200 MHz\n• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)\n• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)\n• OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)\n• Active Bias Control (adjustable externally)\n• Single 3 to 5 V Supply\n• Cost-effective 12-pin, 3 m;

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