DC - 25 GHz GaAs MMIC Distributed LNA

Key Features • Broadband performance: DC to 26 GHz • High gain: 18.5 dB • Low noise figure: 3.2 dB • High output IP3: + 36 dBm • Positive supply : + 7V @ 150 mA • 50Ω matched I/O • Compact die size: 3 mm × 1.3 mm × 0.1 mm Applications • Test and measurement instrumentation • Military a

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LNA, DC-26 GHz

The MMA041AA is a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) Pseudomorphic HighElectron Mobility Transistor (PHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation, defense, aerospace, and communications infrastructure a Broadband performance: DC to 26 GHz\nHigh gain: 18.5 dB\nLow noise figure: 2 dB\nHigh output IP3: + 36 dBm\n High input power: + 22 dBm\nPositive supply : +6V at 150 mA\n50Ω matched input/output\nDie size: 3.0 mm × 1.35 mm × 0.1 mm;

Microchip

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Package：模具；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：MMIC, DC-20 GHZ, 23DBM LNA DIE

Microchip

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LNA, DC-26 GHz

The MMA041AA is a low noise distributed amplifier die that operates between DC and 26 GHz. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression. The MMA041AA amplifier features RF I/Os internally matched to 50 O, allowing for easier i

Microchip

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