Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V

64-Bit TRI-STATE Random Access Read/Write Memory

文件：605.09 Kbytes 页数：6 Pages

ROCHESTERRochester Electronics

罗切斯特罗切斯特电子公司

MILITARY TEMPERATURE SRAM in a 16-pin ceramic DIP package

64-Bit TRI-STATE Random Access Read/Write Memory

文件：606.92 Kbytes 页数：1 Pages

ROCHESTERRochester Electronics

罗切斯特罗切斯特电子公司

64-Bit TRI-STATE Random Access Read/Write Memory

文件：130.18 Kbytes 页数：6 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V

64-Bit TRI-STATE Random Access Read/Write Memory

文件：605.09 Kbytes 页数：6 Pages

ROCHESTERRochester Electronics

罗切斯特罗切斯特电子公司

MILITARY TEMPERATURE SRAM in a 16-pin ceramic DIP package

64-Bit TRI-STATE Random Access Read/Write Memory

文件：606.92 Kbytes 页数：1 Pages

ROCHESTERRochester Electronics

罗切斯特罗切斯特电子公司

64-Bit 3-STATE Random Access Read/Write Memory

General Description The MM74C89 is a 16-word by 4-bit random access read/write memory. Inputs to the memory consist of four address lines, four data input lines, a write enable line and a memory enable line. The four binary address inputs are decoded internally to select each of the 16 possible

文件：60.65 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司