Dual 4-Input NAND Gate

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NSCNational Semiconductor (TI)

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Dual 4-Input NAND Gate

General Description\nThese NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the ability to drive ■ Typical propagation delay: 8 ns\n■ Wide power supply range: 2–6V\n■ Low quiescent current: 20 μA maximum (74HC Series)\n■ Low input current: 1 μA maximum\n■ Fanout of 10 LS-TTL loads ;

TI

德州仪器

Dual 4-Input NAND Gate

文件：123.75 Kbytes 页数：4 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Dual 4-Input NAND Gate

文件：123.75 Kbytes 页数：4 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司