MLV1210E3

SMD 1210 Multilayer Varistor

FEATURES •Surfacemountmultilayersurgesuppressor •Inherentbidirectionalclamping •Excellentenergy/volumeratio •Suitableforreflowsoldering •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

MLV1210E3

Multilayer Varistor

MLV1210E3_V01

SMD 1210 Multilayer Varistor

FEATURES •Surfacemountmultilayersurgesuppressor •Inherentbidirectionalclamping •Excellentenergy/volumeratio •Suitableforreflowsoldering •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912

MLV1210E31403T

Package：1210（3225 公制）；包装：带盒（TB） 类别：电路保护 TVS - 压敏电阻，MOV 描述：VARISTOR 400A 1210

MLV1210E32003T

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT） 类别：电路保护 TVS - 压敏电阻，MOV 描述：VARISTOR 400A 1210

MLV1210E32503T

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 压敏电阻，MOV 描述：VARISTOR 400A 1210

BTA1210E3

PNPEpitaxialPlanarTransistor

Description TheBTA1210E3isaPNPDarlingtontransistor,designedforuseingeneralpurposeamplifierandlowspeedswitchingapplication. Features •HighBVCEO •HighDCcurrentgain •Highcurrentcapability •Monolithicconstructionwithbuilt-inbase-emittershuntresistors

TNPW1210E3

HighStabilityThinFilmFlatChipResistors

FEATURES •Superiormoistureresistivity(85°C;85%RH) •Excellentoverallstabilityatdifferent environmentalconditions≤0.05%(1000h ratedpowerat70°C) •AEC-Q200qualified •Singlelotdatecode(optional) •Advancedsulfurresistanceverifiedaccording toASTMB809

TNPW1210E3

HighStabilityThinFilmFlatChipResistors

•Superiormoistureresistivity(85°C;85%RH) •Excellentoverallstabilityatdifferent environmentalconditions≤0.05%(1000h ratedpowerat70°C) •AEC-Q200qualified •Singlelotdatecode(optional) •Sulfurresistanceverifiedaccordingto ASTMB809